MRF545

Microchip MRF545

Part No:

MRF545

Manufacturer:

Microchip

Datasheet:

-

Package:

-

AINNX NO:

49243900-MRF545

Description:

Trans RF BJT PNP 70V 0.4A 3-Pin TO-39

Products specifications
  • Lifecycle Status
    Production (Last Updated: 2 months ago)
  • Mount
    Through Hole
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Pins
    3
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Collector-Emitter Breakdown Voltage
    70 V
  • RoHS
    Compliant
  • Package Description
    CYLINDRICAL, O-MBCY-W3
  • Package Style
    CYLINDRICAL
  • Package Body Material
    METAL
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Rohs Code
    No
  • Transition Frequency-Nom (fT)
    1400 MHz
  • Manufacturer Part Number
    MRF545
  • Package Shape
    ROUND
  • Manufacturer
    Microsemi Corporation
  • Number of Elements
    1
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    MICROSEMI CORP
  • Risk Rank
    5.1
  • Part Package Code
    TO-39
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • JESD-609 Code
    e0
  • Pbfree Code
    No
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    200 °C
  • Min Operating Temperature
    -65 °C
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.29.00.75
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    3.5 W
  • Terminal Position
    BOTTOM
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    WIRE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    O-MBCY-W3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    PNP
  • Collector Emitter Voltage (VCEO)
    70 V
  • Max Collector Current
    400 mA
  • JEDEC-95 Code
    TO-39
  • Gain
    14 dB
  • Transition Frequency
    1.4 GHz
  • Collector Base Voltage (VCBO)
    100 V
  • Collector Current-Max (IC)
    0.4 A
  • Collector-Emitter Voltage-Max
    70 V
  • Highest Frequency Band
    VERY HIGH FREQUENCY BAND
  • Collector-Base Capacitance-Max
    3.2 pF
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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