JAN1N3613

Microchip JAN1N3613

Part No:

JAN1N3613

Manufacturer:

Microchip

Datasheet:

-

Package:

Package-A-2

AINNX NO:

34711876-JAN1N3613

Description:

Diode Switching 600V 1A 2-Pin Case A

Products specifications
  • Lifecycle Status
    Production (Last Updated: 2 months ago)
  • Package / Case
    Package-A-2
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Number of Pins
    2
  • Lead Free Status / RoHS Status
    --
  • Vr - Reverse Voltage
    600 V
  • Ir - Reverse Current
    1 uA
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Unit Weight
    0.017637 oz
  • Minimum Operating Temperature
    - 65 C
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Mounting Styles
    Through Hole
  • Manufacturer
    Microchip
  • Brand
    Microchip / Microsemi
  • If - Forward Current
    1 A
  • RoHS
    N
  • Schedule B
    8541100080, 8541100080/8541100080, 8541100080/8541100080/8541100080, 8541100080/8541100080/8541100080/8541100080
  • Package
    Bulk
  • Base Product Number
    1N3613
  • Mfr
    Microchip Technology
  • Product Status
    Active
  • Series
    *
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Type
    Standard Recovery Rectifiers
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    175 °C
  • Min Operating Temperature
    -55 °C
  • Subcategory
    Diodes & Rectifiers
  • Termination Style
    Axial
  • Configuration
    Single
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    100 µA @ 300 V
  • Voltage - Forward (Vf) (Max) @ If
    1.1 V @ 1 A
  • Operating Temperature - Junction
    -65°C ~ 175°C
  • Max Surge Current

    Surge current is a peak non repetitive current. Maximum (peak or surge) forward current = IFSM or if(surge), the maximum peak amount of current the diode is able to conduct in forward bias mode.

    30 A
  • Voltage - DC Reverse (Vr) (Max)
    600 V
  • Current - Average Rectified (Io)
    1A
  • Forward Voltage

    the amount of voltage needed to get current to flow across a diode.

    1.1 V
  • Max Reverse Voltage (DC)
    600 V
  • Average Rectified Current

    Mainly used to characterize alternating voltage and current. It can be computed by averaging the absolute value of a waveform over one full period of the waveform.

    1 A
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    Rectifiers
  • Peak Reverse Current

    The maximum voltage that a diode can withstand in the reverse direction without breaking down or avalanching.If this voltage is exceeded the diode may be destroyed. Diodes must have a peak inverse voltage rating that is higher than the maximum voltage that will be applied to them in a given application.

    1 µA
  • Max Repetitive Reverse Voltage (Vrrm)
    600 V
  • Capacitance @ Vr, F
    -
  • Peak Non-Repetitive Surge Current
    30 A
  • Diode Configuration
    Single
  • Recovery Time
    8.3 ms
  • Repetitive Peak Reverse Voltage
    600
  • Product
    Rectifiers
  • Vf - Forward Voltage
    600 mV
  • Product Category

    a particular group of related products.

    Rectifiers
  • Length
    5.21 mm
  • Diameter
    2.79 mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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