MPMD100B120RH

MagnaChip Semiconductor MPMD100B120RH

Part No:

MPMD100B120RH

Package:

-

ROHS:

AINNX NO:

23054465-MPMD100B120RH

Description:

Trans IGBT Module N-CH 1200V 150A 780000mW 7-Pin Case 7DM-3

Products specifications
  • Mount
    Panel, Screw
  • Number of Pins
    7
  • ECCN (US)
    EAR99
  • Maximum Collector-Emitter Voltage (V)
    1200
  • Typical Collector Emitter Saturation Voltage (V)
    2.7
  • Maximum Gate Emitter Voltage (V)
    ±20
  • Maximum Power Dissipation (mW)
    780000
  • Maximum Continuous Collector Current (A)
    150
  • Maximum Gate Emitter Leakage Current (uA)
    0.25
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Standard Package Name
    Case 7DM-3
  • Supplier Package
    Case 7DM-3
  • Military
    No
  • Mounting
    Screw
  • Package Height
    29.75(Max)
  • Package Length
    108.5
  • Package Width
    62.5
  • PCB changed
    7
  • Operating Temperature (Max.)
    150C
  • Operating Temperature Classification
    Military
  • Package Type
    CASE 7DM-3
  • Collector Current (DC)
    150(A)
  • Rad Hardened
    No
  • Collector-Emitter Voltage
    1200(V)
  • Operating Temperature (Min.)
    -55C
  • Gate to Emitter Voltage (Max)
    ±20(V)
  • Schedule B
    8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080
  • RoHS
    Compliant
  • Package Description
    ,
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Rohs Code
    Yes
  • Manufacturer Part Number
    MPMD100B120RH
  • Manufacturer
    MagnaChip Semiconductor Ltd
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    MAGNACHIP SEMICONDUCTOR LTD
  • Risk Rank
    5.78
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    780 W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    7
  • Configuration
    Dual
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Dual
  • Collector Emitter Voltage (VCEO)
    1.2 kV
  • Max Collector Current
    100 A
  • Channel Type
    N
  • Width
    62.5 mm
  • Height
    20.5 mm
  • Length
    108.5 mm
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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