DM2G150SH6NE

MagnaChip Semiconductor DM2G150SH6NE

Part No:

DM2G150SH6NE

Package:

-

AINNX NO:

21686188-DM2G150SH6NE

Description:

Trans IGBT Module N-CH 600V 175A 568000mW 7-Pin Case 7DM-1

Products specifications
  • ECCN (US)
    EAR99
  • Typical Collector Emitter Saturation Voltage (V)
    2.1
  • Maximum Collector-Emitter Voltage (V)
    600
  • Maximum Power Dissipation (mW)
    568000
  • Maximum Gate Emitter Voltage (V)
    ±20
  • Maximum Continuous Collector Current (A)
    175
  • Maximum Gate Emitter Leakage Current (uA)
    0.15
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Automotive
    Unknown
  • Supplier Package
    Case 7DM-1
  • Military
    No
  • Mounting
    Screw
  • Package Length
    93
  • Package Width
    35
  • PCB changed
    7
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Pin Count

    a count of all of the component leads (or pins)

    7
  • Configuration
    Dual
  • Channel Type
    N
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    Supplier Unconfirmed
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