DM2G150SH12AE

MagnaChip Semiconductor DM2G150SH12AE

Part No:

DM2G150SH12AE

Package:

-

AINNX NO:

22799259-DM2G150SH12AE

Description:

Trans IGBT Module N-CH 1200V 200A 1100000mW 7-Pin Case 7DM-2

Products specifications
  • ECCN (US)
    EAR99
  • Maximum Collector-Emitter Voltage (V)
    1200
  • Typical Collector Emitter Saturation Voltage (V)
    1.8
  • Maximum Gate Emitter Voltage (V)
    ±20
  • Maximum Power Dissipation (mW)
    1100000
  • Maximum Continuous Collector Current (A)
    200
  • Maximum Gate Emitter Leakage Current (uA)
    0.25
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Supplier Package
    Case 7DM-2
  • Military
    No
  • Mounting
    Screw
  • Package Height
    29.95(Max)
  • Package Length
    94
  • Package Width
    48
  • PCB changed
    7
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Pin Count

    a count of all of the component leads (or pins)

    7
  • Configuration
    Dual
  • Channel Type
    N
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    Supplier Unconfirmed
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