MDS5601URH

MagnaChip MDS5601URH

Part No:

MDS5601URH

Manufacturer:

MagnaChip

Datasheet:

-

Package:

-

AINNX NO:

23817583-MDS5601URH

Description:

Small Signal Field-Effect Transistor, 12.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

Products specifications
  • Mount
    Surface Mount
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Pins
    8
  • Number of Terminals
    8
  • Transistor Element Material
    SILICON
  • Number of Elements
    2
  • RoHS
    Compliant
  • Package Description
    SMALL OUTLINE, R-PDSO-G8
  • Package Style
    SMALL OUTLINE
  • Package Body Material
    PLASTIC/EPOXY
  • Operating Temperature-Min
    -55 °C
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Rohs Code
    Yes
  • Manufacturer Part Number
    MDS5601URH
  • Package Shape
    RECTANGULAR
  • Manufacturer
    MagnaChip Semiconductor Ltd
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    MAGNACHIP SEMICONDUCTOR LTD
  • Risk Rank
    5.75
  • Drain Current-Max (ID)
    12.9 A
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape and Reel
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PDSO-G8
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    2 W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Continuous Drain Current (ID)
    10 A
  • Gate to Source Voltage (Vgs)
    20 V
  • Drain-source On Resistance-Max
    0.0105 Ω
  • DS Breakdown Voltage-Min
    30 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Feedback Cap-Max (Crss)
    126 pF
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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