MDP18N50BTH

MagnaChip MDP18N50BTH

Part No:

MDP18N50BTH

Manufacturer:

MagnaChip

Datasheet:

-

Package:

-

AINNX NO:

23816083-MDP18N50BTH

Description:

Power Field-Effect Transistor,

Products specifications
  • Mount
    Through Hole
  • Number of Pins
    3
  • Number of Elements
    1
  • RoHS
    Compliant
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    222 ns
  • Package Description
    ,
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Rohs Code
    Yes
  • Manufacturer Part Number
    MDP18N50BTH
  • Manufacturer
    MagnaChip Semiconductor Ltd
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    MAGNACHIP SEMICONDUCTOR LTD
  • Risk Rank
    5.68
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    236 W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    236 W
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    32 ns
  • Continuous Drain Current (ID)
    18 A
  • Gate to Source Voltage (Vgs)
    30 V
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    2.49 nF
  • Drain to Source Resistance
    270 mΩ
  • Width
    4.83 mm
  • Height
    16.51 mm
  • Length
    10.67 mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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