Lite-On Semiconductor Corporation LT4948C

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

YES

Material

sealing rings - silicone

Number of Terminals

8

Transistor Element Material

SILICON

Exterior Housing Material

2

Type of capacitor

ceramic

Kind of capacitor

MLCC

Mounting

SMD

Case - inch

0201

Case - mm

0603

Capacitors series

GCQ

Gross Weight

46.00

Protection class

IP68

Nominal voltage

250 V

Wire section

6 x 2 mm2

Rohs Code

Yes

Part Life Cycle Code

Obsolete

Ihs Manufacturer

LITE-ON SEMICONDUCTOR CORP

Part Package Code

SOT

Package Description

LEAD FREE, SOP-8

Drain Current-Max (ID)

4.5 A

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

ECCN Code

EAR99

Color

housing - black; nuts - blue

Additional Feature

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

ULTRA-LOW RESISTANCE

Capacitance

8.6pF

Terminal Position

DUAL

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

GULL WING

Peak Reflow Temperature (Cel)

255

Reach Compliance Code

unknown

Current Rating

Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

25 A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

a count of all of the component leads (or pins)

8

JESD-30 Code

R-PDSO-G8

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Dielectric

C0G (NP0)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Transistor Application

SWITCHING

Polarity/Channel Type

N-CHANNEL

Drain-source On Resistance-Max

0.053 Ω

Pulsed Drain Current-Max (IDM)

18 A

DS Breakdown Voltage-Min

60 V

Avalanche Energy Rating (Eas)

3.2 mJ

FET Technology

METAL-OXIDE SEMICONDUCTOR