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Home /Discrete Semiconductor Products /Transistors - Bipolar (BJT) - Single /MMBT3904 1AM /
MMBT3904 1AM

LGE MMBT3904 1AM

Part No:

MMBT3904 1AM

Manufacturer:

LGE

Package:

-

AINNX NO:

68728000-MMBT3904 1AM

Description:

40V 250mW 100@10mA,1V 100mA NPN SOT-23 Bipolar (BJT) ROHS

Products specifications
  • RoHS
    true
  • Collector Cut-Off Current (Icbo)
    50nA
  • Collector-Emitter Breakdown Voltage (Vceo)
    40V
  • Power Dissipation (Pd)
    250mW
  • DC Current Gain (hFE@Ic,Vce)
    100@10mA,1V
  • Collector Current (Ic)
    100mA
  • Transition Frequency (fT)
    300MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)
    300mV@50mA,5mA
  • Package
    Tape & Reel (TR)
  • Transistor Type
    NPN
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Documents & Media Download datasheets and manufacturer documentation for LGE MMBT3904 1AM.
Pricing & Ordering

  • Quantity

    Unit Price

    Ext. Price

  • 1+

    $1.234114

    $1.21

  • 500+

    $0.907427

    $453.76

  • 1000+

    $0.756153

    $756.19

  • 2000+

    $0.693774

    $1,387.50

  • 5000+

    $0.648337

    $3,241.75

  • 10000+

    $0.603155

    $6,031.55

  • 15000+

    $0.583350

    $8,750.24

  • 50000+

    $0.573532

    $28,676.58

* The above prices does not include taxes and freight rates, which will be calculated on the order pages.

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