L2N7002KWT1G

Leshan L2N7002KWT1G

Part No:

L2N7002KWT1G

Manufacturer:

Leshan

Datasheet:

-

Package:

-

AINNX NO:

41957509-L2N7002KWT1G

Description:

Small Signal Field-Effect Transistor, 0.32A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Products specifications
  • Mount
    Surface Mount
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • RoHS
    Yes
  • Package Description
    SMALL OUTLINE, R-PDSO-G3
  • Package Style
    SMALL OUTLINE
  • Package Body Material
    PLASTIC/EPOXY
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Rohs Code
    Yes
  • Manufacturer Part Number
    L2N7002KWT1G
  • Package Shape
    RECTANGULAR
  • Manufacturer
    LRC Leshan Radio Co Ltd
  • Number of Elements
    1
  • Part Life Cycle Code
    Contact Manufacturer
  • Ihs Manufacturer
    LESHAN RADIO CO LTD
  • Risk Rank
    5.56
  • Drain Current-Max (ID)
    0.32 A
  • ECCN Code
    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PDSO-G3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    3.4 ns
  • Polarity/Channel Type
    N-CHANNEL
  • Continuous Drain Current (ID)
    320 mA
  • Gate to Source Voltage (Vgs)
    20 V
  • Drain-source On Resistance-Max
    2.3 Ω
  • DS Breakdown Voltage-Min
    60 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
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