LAPIS RZR040P01TL

Mounting Type

Surface Mount

Package / Case

SC-96

Supplier Device Package

TSMT3

RoHS

Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Continuous Drain (Id) @ 25℃

4A (Ta)

Other Names

RZR040P01MGTL RZR040P01TLCT

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Power Dissipation (Max)

1W (Ta)

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

150°C (TJ)

Series

-

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Cut Tape (CT)

Tolerance

0.05 %

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Temperature Coefficient

The resistance-change factor per degree Celsius of temperature change is called the temperature coefficient of resistance. This factor is represented by the Greek lower-case letter “alpha” (α). A positive coefficient for a material means that its resistance increases with an increase in temperature.

0.2 ppm/°C

Resistance

150 Ω

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-55 °C

Composition

Metal Foil

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

100 mW

Technology

MOSFET (Metal Oxide)

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

30 mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

2350pF @ 6V

Gate Charge (Qg) (Max) @ Vgs

30nC @ 4.5V

Drain to Source Voltage (Vdss)

12V

Vgs (Max)

±10V

FET Feature

-

Features

Moisture Resistant

Width

1.27 mm

Height

635 µm

Length

3.81 mm