QST7TR

LAPIS QST7TR

Part No:

QST7TR

Manufacturer:

LAPIS

Datasheet:

-

Package:

SOT-23-6 Thin, TSOT-23-6

AINNX NO:

40844064-QST7TR

Description:

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package
    TSMT6 (SC-95)
  • Voltage, Rating
    150 V
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Current-Collector (Ic) (Max)
    1.5A
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C (TJ)
  • Series
    -
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Tolerance
    0.5 %
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Temperature Coefficient

    The resistance-change factor per degree Celsius of temperature change is called the temperature coefficient of resistance. This factor is represented by the Greek lower-case letter “alpha” (α). A positive coefficient for a material means that its resistance increases with an increase in temperature.

    100 ppm/°C
  • Resistance
    4.12 kΩ
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    155 °C
  • Min Operating Temperature
    -55 °C
  • Composition
    Thin Film
  • Power Rating
    125 mW
  • Base Part Number
    QST
  • Power - Max
    500mW
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    270 @ 100mA, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Vce Saturation (Max) @ Ib, Ic
    370mV @ 50mA, 1A
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Frequency - Transition
    280MHz
  • Height
    650 µm
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