IXZ308N120

IXYS-RF IXZ308N120

Part No:

IXZ308N120

Manufacturer:

IXYS-RF

Datasheet:

IXZ308N120

Package:

6-SMD, Flat Lead Exposed Pad

ROHS:

AINNX NO:

6091716-IXZ308N120

Description:

IXYS RF IXZ308N120 RF FET Transistor, 1.2 kV, 8 A, 880 W, DE-375

Products specifications
  • Factory Lead Time
    10 Weeks
  • Package / Case
    6-SMD, Flat Lead Exposed Pad
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Number of Elements
    1
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    1200V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Series
    Z-MOS™
  • Published
    2004
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    175°C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    880W
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Frequency
    65MHz
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • Transistor Application
    SWITCHING
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    5ns
  • Drain to Source Voltage (Vdss)
    1.2kV
  • Transistor Type
    N-Channel
  • Continuous Drain Current (ID)
    8A
  • Gain
    23dB
  • Drain Current-Max (Abs) (ID)
    8A
  • DS Breakdown Voltage-Min
    1200V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Drain to Source Resistance
    2.1Ohm
  • Voltage - Test
    100V
  • REACH SVHC
    No SVHC
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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