IRFR320

Intersil IRFR320

Part No:

IRFR320

Manufacturer:

Intersil

Datasheet:

-

Package:

-

AINNX NO:

51049633-IRFR320

Description:

MOSFET N-CH 400V 3.1A DPAK

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Package Description
    SMALL OUTLINE, R-PSSO-G2
  • Package Style
    SMALL OUTLINE
  • Package Body Material
    PLASTIC/EPOXY
  • Operating Temperature-Min
    -55 °C
  • Reflow Temperature-Max (s)
    30
  • Operating Temperature-Max
    150 °C
  • Rohs Code
    No
  • Manufacturer Part Number
    IRFR320
  • Package Shape
    RECTANGULAR
  • Manufacturer
    Vishay Siliconix
  • Number of Elements
    1
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    VISHAY SILICONIX
  • Risk Rank
    5.08
  • Part Package Code
    TO-252
  • Drain Current-Max (ID)
    3.1 A
  • JESD-609 Code
    e0
  • Pbfree Code
    No
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    AVALANCHE RATED
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    compliant
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-252
  • Drain-source On Resistance-Max
    1.8 Ω
  • Pulsed Drain Current-Max (IDM)
    12 A
  • DS Breakdown Voltage-Min
    400 V
  • Avalanche Energy Rating (Eas)
    160 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
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