International Rectifier IRGR4045DPBF

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins

3

Supplier Device Package

D-Pak

Collector-Emitter Breakdown Voltage

600 V

RoHS

Compliant

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

17 ns

Package

Bulk

Current-Collector (Ic) (Max)

12 A

Base Product Number

IRGR4045

Mfr

International Rectifier

Product Status

Active

Test Conditions

400V, 6A, 47Ohm, 15V

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape & Reel

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 175°C (TJ)

Series

-

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

175 °C

Min Operating Temperature

-55 °C

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

77 W

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

39 W

Input Type

Standard

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

27 ns

Power - Max

77 W

Collector Emitter Voltage (VCEO)

2 V

Max Collector Current

12 A

Reverse Recovery Time

74 ns

Voltage - Collector Emitter Breakdown (Max)

600 V

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 6A

IGBT Type

Trench

Gate Charge

the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

19.5 nC

Current - Collector Pulsed (Icm)

18 A

Td (on/off) @ 25°C

27ns/75ns

Switching Energy

56µJ (on), 122µJ (off)

Reverse Recovery Time (trr)

74 ns

Width

2.39 mm

Height

6.22 mm

Length

6.73 mm

REACH SVHC

No SVHC

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

Lead Free

Lead Free