IRGP4750D-EPBF

International Rectifier IRGP4750D-EPBF

Part No:

IRGP4750D-EPBF

Datasheet:

-

Package:

TO-247-3

AINNX NO:

40551942-IRGP4750D-EPBF

Description:

IGBT W/ULTRAFAST SOFT RECOVERY D

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247AD
  • Housing Material
    Polyamide (PA46), Nylon 4/6, Glass Filled
  • Number of Positions or Pins (Grid)
    24 (2 x 12)
  • Contact Material - Mating
    Beryllium Copper
  • Contact Material - Post
    Brass
  • Contact Finish Mating
    Gold
  • Package
    Bulk
  • Current-Collector (Ic) (Max)
    70 A
  • Mfr
    International Rectifier
  • Product Status
    Active
  • Test Conditions
    400V, 35A, 10Ohm, 15V
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 125°C
  • Series
    508
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Termination
    Wire Wrap
  • Type
    DIP, 0.3 (7.62mm) Row Spacing
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    3A
  • Pitch - Mating
    0.100 (2.54mm)
  • Contact Finish - Post
    Gold
  • Contact Resistance
    --
  • Input Type
    Standard
  • Power - Max
    273 W
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Termination Post Length
    0.500 (12.70mm)
  • Pitch - Post
    0.100 (2.54mm)
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 35A
  • IGBT Type
    -
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    105 nC
  • Current - Collector Pulsed (Icm)
    105 A
  • Td (on/off) @ 25°C
    50ns/105ns
  • Switching Energy
    1.3mJ (on), 500µJ (off)
  • Reverse Recovery Time (trr)
    150 ns
  • Features
    Open Frame
  • Contact Finish Thickness - Mating
    30.0µin (0.76µm)
  • Contact Finish Thickness - Post
    10.0µin (0.25µm)
  • Material Flammability Rating
    UL94 V-0
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