International Rectifier IRF640NSTRL

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

YES

Number of Terminals

2

Transistor Element Material

SILICON

Package Description

PLASTIC, D2PAK-2/3

Package Style

SMALL OUTLINE

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

30

Operating Temperature-Max

175 °C

Rohs Code

No

Manufacturer Part Number

IRF640NSTRL

Package Shape

RECTANGULAR

Manufacturer

International Rectifier

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Risk Rank

7.6

Part Package Code

D2PAK

Drain Current-Max (ID)

18 A

JESD-609 Code

e0

Pbfree Code

No

ECCN Code

EAR99

Terminal Finish

Tin/Lead (Sn/Pb)

Additional Feature

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

HTS Code

HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

8541.29.00.95

Subcategory

FET General Purpose Powers

Terminal Position

SINGLE

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

GULL WING

Peak Reflow Temperature (Cel)

225

Reach Compliance Code

unknown

Pin Count

a count of all of the component leads (or pins)

3

JESD-30 Code

R-PSSO-G2

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Case Connection

DRAIN

Transistor Application

SWITCHING

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-263AB

Drain Current-Max (Abs) (ID)

18 A

Drain-source On Resistance-Max

0.15 Ω

Pulsed Drain Current-Max (IDM)

72 A

DS Breakdown Voltage-Min

200 V

Avalanche Energy Rating (Eas)

247 mJ

FET Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)

150 W