BCW60DE6327HTSA1

International Rectifier BCW60DE6327HTSA1

Part No:

BCW60DE6327HTSA1

Datasheet:

-

Package:

TO-236-3, SC-59, SOT-23-3

AINNX NO:

40843987-BCW60DE6327HTSA1

Description:

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package
    SOT-23-3
  • Voltage, Rating
    50 V
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Current-Collector (Ic) (Max)
    100mA
  • Other Names
    BCW 60D E6327 BCW 60D E6327-ND BCW 60D E6327TR-ND BCW60DE6327 BCW60DE6327BTSA1 BCW60DE6327HTSA1TR BCW60DE6327XT SP000010549
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C (TJ)
  • Series
    -
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Tolerance
    1 %
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Temperature Coefficient

    The resistance-change factor per degree Celsius of temperature change is called the temperature coefficient of resistance. This factor is represented by the Greek lower-case letter “alpha” (α). A positive coefficient for a material means that its resistance increases with an increase in temperature.

    25 ppm/°C
  • Resistance
    2.71 kΩ
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    155 °C
  • Min Operating Temperature
    -55 °C
  • Composition
    Thin Film
  • Power Rating
    100 mW
  • Base Part Number
    BCW60
  • Power - Max
    330mW
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    380 @ 2mA, 5V
  • Current - Collector Cutoff (Max)
    20nA (ICBO)
  • Vce Saturation (Max) @ Ib, Ic
    550mV @ 1.25mA, 50mA
  • Voltage - Collector Emitter Breakdown (Max)
    32V
  • Frequency - Transition
    250MHz
  • Height
    550 µm
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