Infineon Technologies IRF9952TRPBF

Factory Lead Time

12 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

3.5A 2.3A

Number of Elements

2

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

20 ns

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C~150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape & Reel (TR)

Series

HEXFET®

Published

2004

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Resistance

100mOhm

Additional Feature

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

HIGH RELIABILITY

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

2W

Terminal Position

DUAL

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

GULL WING

Current Rating

Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

3.5A

Base Part Number

IRF9952PBF

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

2W

FET Type

N and P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

100m Ω @ 2.2A, 10V

Vgs(th) (Max) @ Id

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

190pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

14ns

Polarity/Channel Type

N-CHANNEL AND P-CHANNEL

Continuous Drain Current (ID)

3.5A

Threshold Voltage

1V

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

30V

Pulsed Drain Current-Max (IDM)

16A

Avalanche Energy Rating (Eas)

44 mJ

FET Technology

METAL-OXIDE SEMICONDUCTOR

FET Feature

Logic Level Gate

Nominal Vgs

1 V

Height

1.4986mm

Length

4.9784mm

Width

3.9878mm

REACH SVHC

No SVHC

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

ROHS3 Compliant

Lead Free

Contains Lead, Lead Free