Infineon Technologies IRF7907TRPBF

Factory Lead Time

12 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

9.1A 11A

Number of Elements

2

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C~150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape & Reel (TR)

Series

HEXFET®

Published

2008

JESD-609 Code

e3

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

2W

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

IRF7907PBF

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Dual

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

2W

FET Type

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs

16.4m Ω @ 9.1A, 10V

Vgs(th) (Max) @ Id

2.35V @ 25μA

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Continuous Drain Current (ID)

11A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

30V

Avalanche Energy Rating (Eas)

15 mJ

FET Technology

METAL-OXIDE SEMICONDUCTOR

FET Feature

Logic Level Gate

Height

1.4986mm

Length

4.9784mm

Width

3.9878mm

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

ROHS3 Compliant

Lead Free

Lead Free