IKW50N60H3FKSA1

Infineon Technologies IKW50N60H3FKSA1

Part No:

IKW50N60H3FKSA1

Datasheet:

IKW50N60H3

Package:

TO-247-3

ROHS:

AINNX NO:

5836610-IKW50N60H3FKSA1

Description:

IGBT 600V 100A 333W TO247-3

Products specifications
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Collector-Emitter Breakdown Voltage
    600V
  • Number of Elements
    1
  • Test Conditions
    400V, 50A, 7 Ω, 15V
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -40°C~175°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Series
    TrenchStop®
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    333W
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Input Type
    Standard
  • Power - Max
    333W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    100A
  • Reverse Recovery Time
    130 ns
  • Turn On Time

    The time that it takes a gate circuit to allow a current to reach its full value.

    54 ns
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 50A
  • Turn Off Time-Nom (toff)
    297 ns
  • IGBT Type
    Trench Field Stop
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    315nC
  • Current - Collector Pulsed (Icm)
    200A
  • Td (on/off) @ 25°C
    23ns/235ns
  • Switching Energy
    2.36mJ
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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