BCR158E6327HTSA1

Infineon Technologies BCR158E6327HTSA1

Part No:

BCR158E6327HTSA1

Datasheet:

BCR158

Package:

TO-236-3, SC-59, SOT-23-3

ROHS:

AINNX NO:

7839000-BCR158E6327HTSA1

Description:

Trans Digital BJT PNP 50V 100mA T/R

Products specifications
  • Factory Lead Time
    26 Weeks
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Mounting Type
    Surface Mount
  • Mount
    Surface Mount
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Number of Pins
    3
  • Supplier Device Package
    SOT-23-3
  • hFEMin
    70
  • Current-Collector (Ic) (Max)
    100mA
  • Collector-Emitter Breakdown Voltage
    50V
  • Published
    2011
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -65°C
  • Voltage - Rated DC
    -50V
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    200mW
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    -100mA
  • Base Part Number
    BCR158
  • Polarity
    PNP
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power - Max
    200mW
  • Halogen Free
    Not Halogen Free
  • Transistor Type
    PNP - Pre-Biased
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 5mA 5V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500μA, 10mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    200MHz
  • Resistor - Base (R1)
    2.2 kOhms
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Width
    1.3mm
  • Length
    2.9mm
  • Height
    900μm
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • Lead Free
    Lead Free
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