BC817K40E6327HTSA1

Infineon Technologies BC817K40E6327HTSA1

Part No:

BC817K40E6327HTSA1

Datasheet:

BC817, BC818

Package:

TO-236-3, SC-59, SOT-23-3

ROHS:

AINNX NO:

6275197-BC817K40E6327HTSA1

Description:

Trans GP BJT NPN 45V 0.5A Automotive 3-Pin SOT-23 T/R

Products specifications
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Mounting Type
    Surface Mount
  • Mount
    Surface Mount
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Number of Elements
    1
  • Collector-Emitter Saturation Voltage
    700mV
  • Collector-Emitter Breakdown Voltage
    45V
  • Published
    2002
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C TJ
  • JESD-609 Code
    e3
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    500mW
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Frequency
    170MHz
  • Base Part Number
    BC817
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    330mW
  • Power - Max
    500mW
  • Transistor Application
    AMPLIFIER
  • Halogen Free
    Not Halogen Free
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    700mV
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    250 @ 100mA 1V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    700mV @ 50mA, 500mA
  • Transition Frequency
    170MHz
  • Max Breakdown Voltage
    45V
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    5V
  • Width
    1.3mm
  • Length
    2.9mm
  • Height
    900μm
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • Lead Free
    Lead Free
0 Similar Products Remaining
Documents & Media Download datasheets and manufacturer documentation for Infineon Technologies BC817K40E6327HTSA1.