IRF7313TRPBF-1

Infineon IRF7313TRPBF-1

Part No:

IRF7313TRPBF-1

Manufacturer:

Infineon

Datasheet:

Package:

8-SOIC (0.154, 3.90mm Width)

AINNX NO:

23919994-IRF7313TRPBF-1

Category:

Unclassified

Description:

Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Supplier Device Package
    8-SOIC
  • Transistor Element Material
    SILICON
  • Package
    Tape & Reel (TR)
  • Current - Continuous Drain (Id) @ 25℃
    6.5A (Ta)
  • Mfr
    Infineon Technologies
  • Product Status
    Obsolete
  • Moisture Sensitivity Levels
    1
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Temperature-Max
    150 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    IRF7313TRPBF-1
  • Manufacturer
    Infineon Technologies AG
  • Number of Elements
    2
  • Part Life Cycle Code
    End Of Life
  • Ihs Manufacturer
    INFINEON TECHNOLOGIES AG
  • Risk Rank
    5.31
  • Drain Current-Max (ID)
    6.5 A
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Series
    HEXFET®
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Power - Max
    2W (Ta)
  • FET Type
    2 N-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    29mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds
    650pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    33nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    MS-012AA
  • Drain Current-Max (Abs) (ID)
    6.5 A
  • Drain-source On Resistance-Max
    0.029 Ω
  • DS Breakdown Voltage-Min
    30 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    2 W
  • FET Feature
    Standard
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