Infineon BSL806NL6327

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

YES

Supplier Device Package

PG-TSOP6-6

Number of Terminals

6

Transistor Element Material

SILICON

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

2.3A

Mfr

Infineon Technologies

Product Status

Active

Package Description

SMALL OUTLINE, R-PDSO-G6

Package Style

SMALL OUTLINE

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

40

Operating Temperature-Max

150 °C

Rohs Code

Yes

Manufacturer Part Number

BSL806NL6327

Package Shape

RECTANGULAR

Manufacturer

Infineon Technologies AG

Number of Elements

2

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.75

Part Package Code

TSOP

Drain Current-Max (ID)

2.3 A

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

Series

OptiMOS™

JESD-609 Code

e3

Pbfree Code

Yes

ECCN Code

EAR99

Terminal Finish

MATTE TIN

Additional Feature

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Subcategory

FET General Purpose Power

Terminal Position

DUAL

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

GULL WING

Peak Reflow Temperature (Cel)

260

Reach Compliance Code

compliant

Pin Count

a count of all of the component leads (or pins)

6

JESD-30 Code

R-PDSO-G6

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Power - Max

500mW

FET Type

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs

57mOhm @ 2.3A, 2.5V

Vgs(th) (Max) @ Id

750mV @ 11µA

Input Capacitance (Ciss) (Max) @ Vds

259pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

1.7nC @ 2.5V

Drain to Source Voltage (Vdss)

20V

Polarity/Channel Type

N-CHANNEL

Drain Current-Max (Abs) (ID)

2.3 A

Drain-source On Resistance-Max

0.057 Ω

DS Breakdown Voltage-Min

20 V

FET Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)

0.5 W

FET Feature

Logic Level Gate

Feedback Cap-Max (Crss)

28.6 pF