S2D-18C2-0808-350-P
-
68242212-S2D-18C2-0808-350-P
2D SILICON NANOSTAMP: HEXAGONAL
SNS-C16.7-0808-350-D55-P
II-VILINEAR SILICON NANOSTAMP: PERIODS2D-18B3-0808-150-P
II-VI2D SILICON NANOSTAMP: RECTANGULASNS-C36-1212-110-P
II-VILINEAR SILICON NANOSTAMP: PERIODSNS-C20-0808-350-D45-P
II-VILINEAR SILICON NANOSTAMP: PERIODS2D-24B3-0808-150-P
II-VILabels and Industrial Warning Signs 2D Silicon Nanostamp: Rectangular post, Period 700 nm, Etch Depth 150 nm, Feature Width 260 nm, Size 8.0 x 8.3 mmSNS-C16.7-0808-150-D45-P
II-VILabels and Industrial Warning Signs Linear Silicon Nanostamp: Period 600 nm, Groove Depth 150 nm, Duty Cycle 43%, Size 8.0 x 8.3 mmSNS-C11.7-1212-200-P
II-VILabels and Industrial Warning Signs Linear Silicon Nanostamp: Period 855 nm, Groove Depth 200 nm, Duty Cycle 50%, Size 12.5 x 12.5 mmS2D-24D3-0808-150-P
II-VI2D SILICON NANOSTAMP: HEXAGONALSNS-C18-2009-110-D29-P
II-VILINEAR SILICON NANOSTAMP: PERIODS2D-24B2-0808-350-P
II-VI2D SILICON NANOSTAMP: RECTANGULA