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Home /Discrete Semiconductor Products /Transistors - FETs, MOSFETs - Single /HYG065N15NS1B6 /
HYG065N15NS1B6

HUAYI HYG065N15NS1B6

Part No:

HYG065N15NS1B6

Manufacturer:

HUAYI

Package:

-

AINNX NO:

68729825-HYG065N15NS1B6

Description:

150V 165A 6mΩ@10V,100A 375W 3.2V@250uA 1 N-Channel TO-263-6 MOSFETs ROHS

Products specifications
  • RoHS
    true
  • Drain Source Voltage (Vdss)
    150V
  • Drain Source On Resistance (RDS(on)@Vgs,Id)
    6mΩ@10V,100A
  • Power Dissipation (Pd)
    375W
  • Gate Threshold Voltage (Vgs(th)@Id)
    3.2V@250uA
  • Reverse Transfer Capacitance (Crss@Vds)
    88pF@75V
  • Input Capacitance (Ciss@Vds)
    6.646nF@75V
  • Total Gate Charge (Qg@Vgs)
    96nC@10V
  • Package
    Tape & Reel (TR)
  • Type
    1 N-Channel
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Documents & Media Download datasheets and manufacturer documentation for HUAYI HYG065N15NS1B6.
Pricing & Ordering

  • Quantity

    Unit Price

    Ext. Price

  • 1+

    $112.176760

    $112.14

  • 10+

    $105.827136

    $1,058.25

  • 100+

    $99.836954

    $9,983.74

  • 500+

    $94.185801

    $47,092.96

  • 1000+

    $88.854466

    $88,854.49

* The above prices does not include taxes and freight rates, which will be calculated on the order pages.

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