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Hitachi Ltd MBN1200H33D
Part No:
MBN1200H33D
Manufacturer:
Package:
-
AINNX NO:
69239392-MBN1200H33D
Category:
Description:
Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES
Products specifications
- Rohs CodeNo
- Part Life Cycle CodeContact Manufacturer
- Ihs ManufacturerHITACHI LTD
- Package Description,
- Number of Elements1
- Operating Temperature-Max125 °C
- ECCN CodeEAR99
- Reach Compliance Codeunknown
- Collector Current-Max (IC)1200 A
- Collector-Emitter Voltage-Max3300 V
- Gate-Emitter Voltage-Max20 V
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Hitachi LtdDescription: Insulated Gate Bipolar Transistor, 400A I(C), 3300V V(BR)CES, N-Channel, MODULEMBN1200H33D
Hitachi LtdInsulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES