H7N0312LM

Hitachi Ltd H7N0312LM

Part No:

H7N0312LM

Manufacturer:

Hitachi Ltd

Datasheet:

Package:

-

AINNX NO:

69076140-H7N0312LM

Description:

Power Field-Effect Transistor, 85A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    HITACHI LTD
  • Package Description
    SMALL OUTLINE, R-PSSO-G2
  • Drain Current-Max (ID)
    85 A
  • Number of Elements
    1
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • ECCN Code
    EAR99
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.0058 Ω
  • Pulsed Drain Current-Max (IDM)
    340 A
  • DS Breakdown Voltage-Min
    30 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    125 W
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