2SK360IGDTL

Hitachi Ltd 2SK360IGDTL

Part No:

2SK360IGDTL

Manufacturer:

Hitachi Ltd

Datasheet:

Package:

-

AINNX NO:

69235059-2SK360IGDTL

Description:

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MPAK-3

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    HITACHI LTD
  • Package Description
    SMALL OUTLINE, R-PDSO-G3
  • Drain Current-Max (ID)
    0.03 A
  • Number of Elements
    1
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • ECCN Code
    EAR99
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Highest Frequency Band
    VERY HIGH FREQUENCY BAND
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