SGT50T65FD1P7
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69474131-SGT50T65FD1P7
TO-247-3L IGBT Transistors / Modules ROHS
SGM50HF12A1TFD
Hangzhou Silan MicroelectronicsIGBT Transistors / Modules ROHSSGM75HF12A1TFD
Hangzhou Silan MicroelectronicsIGBT Transistors / Modules ROHSAPT35GL60BN
Microsemi Corporation35A, 600V, N-CHANNEL IGBT, TO-247APT110GL100JN
Microsemi Corporation110A, 1000V, N-CHANNEL IGBT, ISOTOP-4APTGT200U170D4G
Microsemi CorporationInsulated Gate Bipolar Transistor, 280A I(C), 1700V V(BR)CES, N-Channel, MODULE-4APTGT75X120RTP3
Microsemi CorporationInsulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, MODULE-35APT35GP120B2DF2
Microsemi CorporationInsulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-ChannelAPTGF330SK60D3
Microsemi CorporationInsulated Gate Bipolar Transistor, 460A I(C), 600V V(BR)CES, N-Channel, MODULE-7APT35G50BN
Microsemi CorporationTRANSISTOR,IGBT,N-CHAN,500V V(BR)CES,35A I(C),TO-247APTGF125X60E3G
Microsemi CorporationInsulated Gate Bipolar Transistor, 180A I(C), 600V V(BR)CES, N-Channel, MODULE-33