SGT40N60FD2P7
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69195810-SGT40N60FD2P7
TO-247-3L IGBT Transistors / Modules ROHS
APTGT200U170D4G
Microsemi CorporationInsulated Gate Bipolar Transistor, 280A I(C), 1700V V(BR)CES, N-Channel, MODULE-4APTGT75X120RTP3
Microsemi CorporationInsulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, MODULE-35APTGF50X60RTP3G
Microsemi CorporationDescription: Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, MODULE-35APTGF25X120E2G
Microsemi CorporationInsulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-17APT25GP90B
Microsemi CorporationInsulated Gate Bipolar Transistor, 72A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PINAPTGF50X120P2G
Microsemi CorporationInsulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, MODULE-17APT35GP120B2DF2
Microsemi CorporationInsulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-ChannelAPT35G60BN
Microsemi CorporationDescription: TRANSISTOR,IGBT,N-CHAN,600V V(BR)CES,35A I(C),TO-247APTGF330SK60D3
Microsemi CorporationInsulated Gate Bipolar Transistor, 460A I(C), 600V V(BR)CES, N-Channel, MODULE-7APTGT300U170D4G
Microsemi CorporationDescription: Insulated Gate Bipolar Transistor, 530A I(C), 1700V V(BR)CES, N-Channel, ROHS COMPLIANT, D4, 4 PIN