AP4228GM

Hammond Manufacturing AP4228GM

Part No:

AP4228GM

Datasheet:

-

Package:

-

AINNX NO:

32874545-AP4228GM

Description:

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    8
  • Transistor Element Material
    SILICON
  • Ihs Manufacturer
    ADVANCED POWER ELECTRONICS CORP
  • Part Package Code
    SOT
  • Package Description
    SMALL OUTLINE, R-PDSO-G8
  • Risk Rank
    5.7
  • Number of Elements
    2
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Manufacturer Part Number
    AP4228GM
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Contact Manufacturer
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.29.00.75
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Pin Count

    a count of all of the component leads (or pins)

    8
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.026 Ω
  • Pulsed Drain Current-Max (IDM)
    40 A
  • DS Breakdown Voltage-Min
    30 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
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