All Products

Home /Discrete Semiconductor Products /Diodes - Rectifiers - Arrays /G3S12020B /

G3S12020B

Global Power G3S12020B

Part No:

G3S12020B

Manufacturer:

Datasheet:

Package:

TO-247-2

AINNX NO:

47330573-G3S12020B

Category:

Diodes - Rectifiers - Arrays

Description:

1200V/20A Silicon Carbide Power Schottky Barrier Diode

Products specifications

Mounting Type
Through Hole
Package / Case
TO-247-2
Supplier Device Package
TO-247AC
Rad Hardened
No
Package
Cut Tape (CT);Tape & Box (TB);
Mfr
Global Power Technology-GPT
Product Status
Active
Current - Average Rectified (Io) (per Diode)
37A (DC)
Series
-
Speed
No Recovery Time > 500mA (Io)
Diode Type
Silicon Carbide Schottky
Current - Reverse Leakage @ Vr
50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Operating Temperature - Junction
-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)
1200 V
Diode Configuration
1 Pair Common Cathode
Reverse Recovery Time (trr)
0 ns

0 Similar Products Remaining