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G3S12010B

Global Power G3S12010B

Part No:

G3S12010B

Manufacturer:

Datasheet:

Package:

TO-247-3

AINNX NO:

47330615-G3S12010B

Category:

Diodes - Rectifiers - Arrays

Description:

1200V/10A Silicon Carbide Power Schottky Barrier Diode

Products specifications

Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247AB
Rad Hardened
No
Package
Cut Tape (CT);Tape & Box (TB);
Mfr
Global Power Technology-GPT
Product Status
Active
Current - Average Rectified (Io) (per Diode)
39A (DC)
Series
-
Speed
No Recovery Time > 500mA (Io)
Diode Type
Silicon Carbide Schottky
Current - Reverse Leakage @ Vr
50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 5 A
Operating Temperature - Junction
-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)
1200 V
Diode Configuration
1 Pair Common Cathode
Reverse Recovery Time (trr)
0 ns

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