GD25Q32BSIGR

GigaDevice GD25Q32BSIGR

Part No:

GD25Q32BSIGR

Manufacturer:

GigaDevice

Datasheet:

-

Package:

-

AINNX NO:

32976761-GD25Q32BSIGR

Description:

32Mb SPI NOR Flash 2.7V-3.6V SOP8 (208mm)

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    8
  • Manufacturer Part Number
    GD25Q32BSIGR
  • Part Life Cycle Code
    Contact Manufacturer
  • Ihs Manufacturer
    ELM TECHNOLOGY CORP
  • Package Description
    0.208 INCH, GREEN, SOP-8
  • Risk Rank
    5.73
  • Clock Frequency-Max (fCLK)
    120 MHz
  • Number of Words
    33554432 words
  • Number of Words Code
    32000000
  • Operating Temperature-Max
    85 °C
  • Operating Temperature-Min
    -40 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Code
    SOP
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Supply Voltage-Nom (Vsup)
    3 V
  • Type
    NOR TYPE
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Number of Functions
    1
  • Terminal Pitch

    The center distance from one pole to the next.

    1.27 mm
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PDSO-G8
  • Supply Voltage-Max (Vsup)
    3.6 V
  • Temperature Grade

    Temperature grades represent a tire's resistance to heat and its ability to dissipate heat when tested under controlled laboratory test conditions.

    INDUSTRIAL
  • Supply Voltage-Min (Vsup)
    2.7 V
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    SYNCHRONOUS
  • Organization
    32MX1
  • Seated Height-Max
    2.16 mm
  • Memory Width
    1
  • Memory Density
    33554432 bit
  • Parallel/Serial
    SERIAL
  • Memory IC Type
    FLASH
  • Programming Voltage

    A special high-voltage supply that supplies the potential and energy for altering the state of certain nonvolatile memory arrays. On some devices, the presence of VPP also acts as a program enable signal (P).

    2.7 V
  • Length
    5.28 mm
  • Width
    5.23 mm
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