MSRTA30080D

GeneSiC Semiconductor MSRTA30080D

Part No:

MSRTA30080D

Datasheet:

-

Package:

Module

AINNX NO:

41486922-MSRTA30080D

Description:

800V 300A THREE TOWER ISO SILICO

Products specifications
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Supplier Device Package
    -
  • Voltage, Rating
    25 V
  • Package
    Bulk
  • Base Product Number
    MSRTA300
  • Mfr
    GeneSiC Semiconductor
  • Product Status
    Active
  • Current - Average Rectified (Io) (per Diode)
    300A
  • Vr - Reverse Voltage
    800 V
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Minimum Operating Temperature
    - 55 C
  • Factory Pack QuantityFactory Pack Quantity
    24
  • Mounting Styles
    SMD/SMT
  • Manufacturer
    GeneSiC Semiconductor
  • Brand
    GeneSiC Semiconductor
  • If - Forward Current
    300 A
  • RoHS
    Details
  • Ifsm - Forward Surge Current
    3800 A
  • Series
    -
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Tolerance
    0.25 %
  • Temperature Coefficient

    The resistance-change factor per degree Celsius of temperature change is called the temperature coefficient of resistance. This factor is represented by the Greek lower-case letter “alpha” (α). A positive coefficient for a material means that its resistance increases with an increase in temperature.

    50 ppm/°C
  • Type
    Standard Recovery Rectifier Module
  • Resistance
    910 Ω
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    155 °C
  • Min Operating Temperature
    -55 °C
  • Composition
    Thin Film
  • Subcategory
    Discrete Semiconductor Modules
  • Power Rating
    63 mW
  • Technology
    Standard
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Current - Reverse Leakage @ Vr
    20 µA @ 800 V
  • Voltage - Forward (Vf) (Max) @ If
    1.1 V @ 300 A
  • Operating Temperature - Junction
    -55°C ~ 150°C
  • Voltage - DC Reverse (Vr) (Max)
    800 V
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    Discrete Semiconductor Modules
  • Diode Configuration
    1 Pair Series Connection
  • Product
    Rectifier Modules
  • Product Category

    a particular group of related products.

    Discrete Semiconductor Modules
  • Height
    350 µm
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