GA35XCP12-247

GeneSiC Semiconductor GA35XCP12-247

Part No:

GA35XCP12-247

Datasheet:

GA35XCP12-247

Package:

TO-247-3

ROHS:

AINNX NO:

5834713-GA35XCP12-247

Description:

IGBT Transistors 1200V 35A SIC IGBT CoPak

Products specifications
  • Factory Lead Time
    18 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Collector-Emitter Breakdown Voltage
    1.2kV
  • Test Conditions
    800V, 35A, 22 Ω, 15V
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -40°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Input Type
    Standard
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    3V
  • Reverse Recovery Time
    36 ns
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    3V @ 15V, 35A
  • IGBT Type
    PT
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    50nC
  • Current - Collector Pulsed (Icm)
    35A
  • Switching Energy
    2.66mJ (on), 4.35mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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