2SK2648-01

Fuji 2SK2648-01

Part No:

2SK2648-01

Manufacturer:

Fuji

Datasheet:

-

Package:

-

AINNX NO:

23857081-2SK2648-01

Description:

Power Field-Effect Transistor, 9A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Manufacturer Part Number
    2SK2648-01-FUJI
  • Manufacturer
    Fuji
  • Package Description
    FLANGE MOUNT, R-PSFM-T3
  • Package Style
    FLANGE MOUNT
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Number of Elements
    1
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    FUJI ELECTRIC CO LTD
  • Risk Rank
    5.36
  • Part Package Code
    TO-247
  • Drain Current-Max (ID)
    9 A
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    2
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-247
  • Drain Current-Max (Abs) (ID)
    9 A
  • Drain-source On Resistance-Max
    1.5 Ω
  • Pulsed Drain Current-Max (IDM)
    36 A
  • DS Breakdown Voltage-Min
    800 V
  • Avalanche Energy Rating (Eas)
    241 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    150 W
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