Surface Mount
having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.
YES
Number of Terminals
2
Transistor Element Material
SILICON
Manufacturer Part Number
FDD8444_F085
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
DPAK
Package Description
ROHS COMPLIANT, DPAK-3
Manufacturer Package Code
TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Risk Rank
5.66
Samacsys Description
Fairchild FDD8444_F085 N-channel MOSFET Transistor, 145 A, 40 V, 3-Pin DPAK
Drain Current-Max (ID)
20 A
Moisture Sensitivity Levels
1
Number of Elements
1
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-609 Code
e3
Pbfree Code
Yes
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
HTS Code
HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.
8541.29.00.95
Terminal Position
SINGLE
Terminal Form
Occurring at or forming the end of a series, succession, or the like; closing; concluding.
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Pin Count
a count of all of the component leads (or pins)
3
JESD-30 Code
R-PSSO-G2
Qualification Status
An indicator of formal certification of qualifications.
Not Qualified
Brand Name
Fairchild Semiconductor
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
A phase of operation during the operation and maintenance stages of the life cycle of a facility.
ENHANCEMENT MODE
Case Connection
DRAIN
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
145 A
Drain-source On Resistance-Max
0.0052 Ω
DS Breakdown Voltage-Min
40 V
Avalanche Energy Rating (Eas)
535 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
153 W