QVE00039

Fairchild QVE00039

Part No:

QVE00039

Manufacturer:

Fairchild

Datasheet:

-

Package:

-

AINNX NO:

67063273-QVE00039

Description:

Infrared Emitter/Sensor Assemblies Phototransistor Horizontal Switch

Products specifications
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Screw
  • Number of Pins
    4
  • Weight
    2.448 g
  • Collector-Emitter Breakdown Voltage
    30 V
  • Number of Elements
    1
  • RoHS
    Compliant
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    85 °C
  • Min Operating Temperature
    -40 °C
  • Operating Supply Voltage

    The voltage level by which an electrical system is designated and to which certain operating characteristics of the system are related.

    1.7 V
  • Output Configuration
    Phototransistor
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    100 mW
  • Forward Current

    Current which flows upon application of forward voltage.

    50 mA
  • Response Time

    the time taken for a circuit or measuring device, when subjected to a change in input signal, to change its state by a specified fraction of its total response to that change.

    50 µs
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    8 µs
  • Collector Emitter Voltage (VCEO)
    30 V
  • Sensing Distance

    It is the sensing range for which the sensor can stably detect the standard sensing object even if there is an ambient temperature drift and/or supply voltage fluctuation. (Normally, it is 70 to 80 % of the maximum operation distance.)

    2.413 mm
  • Reverse Breakdown Voltage
    5 V
  • Wavelength
    940 nm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • Lead Free
    Lead Free
0 Similar Products Remaining