FGB40N6S2T

Fairchild FGB40N6S2T

Part No:

FGB40N6S2T

Manufacturer:

Fairchild

Datasheet:

-

Package:

Axial

AINNX NO:

33795847-FGB40N6S2T

Description:

N-CHANNEL IGBT

Products specifications
  • Package / Case
    Axial
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    Axial
  • Package
    Bulk
  • Current-Collector (Ic) (Max)
    75 A
  • Mfr
    Fairchild Semiconductor
  • Product Status
    Obsolete
  • Test Conditions
    390V, 20A, 3Ohm, 15V
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 155°C
  • Series
    CF
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Size / Dimension
    0.067 Dia x 0.130 L (1.70mm x 3.30mm)
  • Tolerance
    ±5%
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Number of Terminations
    2
  • Temperature Coefficient

    The resistance-change factor per degree Celsius of temperature change is called the temperature coefficient of resistance. This factor is represented by the Greek lower-case letter “alpha” (α). A positive coefficient for a material means that its resistance increases with an increase in temperature.

    0/ -850ppm/°C
  • Resistance
    210 kOhms
  • Composition
    Carbon Film
  • Power (Watts)
    0.125W, 1/8W
  • Failure Rate

    the frequency with which an engineered system or component fails, expressed in failures per unit of time. It is usually denoted by the Greek letter λ (lambda) and is often used in reliability engineering.

    --
  • Input Type
    Standard
  • Power - Max
    290 W
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 20A
  • IGBT Type
    -
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    35 nC
  • Current - Collector Pulsed (Icm)
    180 A
  • Td (on/off) @ 25°C
    8ns/35ns
  • Switching Energy
    115µJ (on), 195µJ (off)
  • Features
    Flame Retardant Coating, Safety
  • Height Seated (Max)
    --
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