ITR-9809/T

Everlight Electronics ITR-9809/T

Part No:

ITR-9809/T

Datasheet:

-

Package:

-

AINNX NO:

31306885-ITR-9809/T

Description:

Optical Switches, Reflective, Phototransistor Output Opto Interrupter

Products specifications
  • RoHS
    Details
  • Collector- Emitter Voltage VCEO Max
    30 V
  • Maximum Collector Current

    The maximum collector current is normally rated to be the current at which the DC current gain (hFE) falls to 50% of its maximum value.

    20 mA
  • Minimum Operating Temperature
    - 25 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 85 C
  • Mounting Styles
    Through Hole
  • If - Forward Current
    20 mA
  • Pd - Power Dissipation
    75 mW
  • Factory Pack QuantityFactory Pack Quantity
    150
  • Gap Width
    5(mm)
  • Operating Temperature Classification
    Commercial
  • Output Device
    Phototransistor
  • Maximum Forward Current
    50(mA)
  • Operating Temp Range
    -25C to 85C
  • Collector Current (DC)
    0.02(A)
  • Number of Elements
    1
  • Rad Hardened
    No
  • Collector-Emitter Voltage
    30(V)
  • Vr - Reverse Voltage
    5 V
  • Package Description
    ROHS COMPLIANT, PLASTIC PACKAGE-4
  • Operating Temperature-Min
    -25 °C
  • Operating Temperature-Max
    85 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    ITR9809/T
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    EVERLIGHT ELECTRONICS CO LTD
  • Risk Rank
    5.75
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Pbfree Code
    Yes
  • Type
    Transmissive
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    85 °C
  • Min Operating Temperature
    -25 °C
  • Number of Functions
    1
  • Reach Compliance Code
    compliant
  • Output Type
    Phototransistor
  • Configuration
    SINGLE
  • Number of Channels
    1 Channel
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    0.075(W)
  • Optoelectronic Device Type
    TRANSISTOR OUTPUT SLOTTED SWITCH
  • Forward Current

    Current which flows upon application of forward voltage.

    50(mA)
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    20 us
  • Collector Emitter Voltage (VCEO)
    30 V
  • Max Collector Current
    20 mA
  • Sensing Distance

    It is the sensing range for which the sensor can stably detect the standard sensing object even if there is an ambient temperature drift and/or supply voltage fluctuation. (Normally, it is 70 to 80 % of the maximum operation distance.)

    5 mm
  • Forward Current-Max
    0.05 A
  • Reverse Breakdown Voltage
    5(V)
  • Wavelength
    940 nm
  • Sensing Method
    Reflective
  • Dark Current-Max
    100 nA
  • Coll-Emtr Bkdn Voltage-Min
    30 V
  • Slot Width-Nom
    5 mm
  • Vf - Forward Voltage
    1.2 V
  • On-state Collector Current-Nom
    2 mA
  • Height
    11 mm
  • Length
    13 mm
  • Width
    8 mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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