EM636327Q-10

Etron Technology Inc EM636327Q-10

Part No:

EM636327Q-10

Package:

-

AINNX NO:

69231733-EM636327Q-10

Category:

Memory

Description:

Description: Synchronous DRAM

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    100
  • Rohs Code
    No
  • Part Life Cycle Code
    Contact Manufacturer
  • Ihs Manufacturer
    ETRON TECHNOLOGY INC
  • Access Time-Max
    7.5 ns
  • Clock Frequency-Max (fCLK)
    100 MHz
  • Number of Words
    524288 words
  • Number of Words Code
    512000
  • Operating Temperature-Max
    70 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Code
    QFP
  • Package Equivalence Code
    QFP100,.7X.9
  • Package Shape
    RECTANGULAR
  • Package Style
    FLATPACK
  • Supply Voltage-Nom (Vsup)
    3.3 V
  • ECCN Code
    EAR99
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8542.32.00.02
  • Terminal Position
    QUAD
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Terminal Pitch

    The center distance from one pole to the next.

    0.635 mm
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    R-PQFP-G100
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Temperature Grade

    Temperature grades represent a tire's resistance to heat and its ability to dissipate heat when tested under controlled laboratory test conditions.

    COMMERCIAL
  • Supply Current-Max
    0.2 mA
  • Organization
    512KX32
  • Output Characteristics
    3-STATE
  • Memory Width
    32
  • Standby Current-Max
    0.003 A
  • Memory Density
    16777216 bit
  • I/O Type
    COMMON
  • Memory IC Type
    SYNCHRONOUS DRAM
  • Refresh Cycles
    2048
  • Sequential Burst Length
    1,2,4,8,FP
  • Interleaved Burst Length
    1,2,4,8
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