231651

Eaton 231651

Part No:

231651

Manufacturer:

Eaton

Datasheet:

-

Package:

TO-220-3

AINNX NO:

34158425-231651

Description:

Power contactor, AC switching

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Supplier Device Package
    TO-220
  • Current - Continuous Drain (Id) @ 25℃
    18A (Ta), 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Power Dissipation (Max)
    2.1W (Ta), 500W (Tc)
  • Rated control supply voltage at AC 50 Hz
    24 - 24
  • Type of electrical connection of main circuit
    Spring clamp connection
  • Number of auxiliary contacts as normally open contact
    1
  • Modular version
    No
  • Rated operation power NEMA
    3.7
  • Number of normally open contacts as main contact
    3
  • Rated control supply voltage at AC 60 Hz
    0 - 0
  • Rated operation current Ie at AC-4, 400 V
    6.6
  • Voltage type for actuating
    AC
  • Rated operation current Ie at AC-3, 400 V
    9
  • Number of normally closed contacts as main contact
    0
  • Rated operation power at AC-3, 400 V
    4
  • Rated operation power at AC-4, 400 V
    3
  • Rated operation current Ie at AC-1, 400 V
    22
  • Rated control supply voltage at DC
    0 - 0
  • Number of auxiliary contacts as normally closed contact
    0
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 175°C (TJ)
  • Series
    --
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Technology
    MOSFET (Metal Oxide)
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    3.5 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id
    4.1V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds
    9550pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    126nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Vgs (Max)
    ±20V
  • FET Feature
    --
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