DI068N03PQ

Diotec Semiconductor AG DI068N03PQ

Part No:

DI068N03PQ

Datasheet:

Package:

-

AINNX NO:

69079263-DI068N03PQ

Description:

Power Field-Effect Transistor, 68A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, QFN5X6, TDSON-8, 8 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    8
  • Transistor Element Material
    SILICON
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    DIOTEC SEMICONDUCTOR AG
  • Package Description
    QFN5X6, TDSON-8, 8 PIN
  • Drain Current-Max (ID)
    68 A
  • Moisture Sensitivity Levels
    1
  • Number of Elements
    1
  • Operating Temperature-Max
    150 °C
  • Operating Temperature-Min
    -55 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • JESD-609 Code
    e2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver (Sn96.5Ag3.5)
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-F8
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.004 Ω
  • Pulsed Drain Current-Max (IDM)
    210 A
  • DS Breakdown Voltage-Min
    30 V
  • Avalanche Energy Rating (Eas)
    80 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    25 W
  • Feedback Cap-Max (Crss)
    350 pF
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