Cree/Wolfspeed CCS050M12CM2

Factory Lead Time

19 Weeks

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

Module

Number of Pins

28

Supplier Device Package

Module

Current - Continuous Drain (Id) @ 25℃

87A Tc

Number of Elements

6

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

50 ns

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Bulk

Series

Z-FET™ Z-Rec™

Published

2013

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150°C

Min Operating Temperature

-40°C

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

337W

Number of Channels

6

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

312W

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

21 ns

Power - Max

337W

FET Type

6 N-Channel (3-Phase Bridge)

Rds On (Max) @ Id, Vgs

34mOhm @ 50A, 20V

Vgs(th) (Max) @ Id

2.3V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds

2.810nF @ 800V

Gate Charge (Qg) (Max) @ Vgs

180nC @ 20V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

19ns

Drain to Source Voltage (Vdss)

1200V 1.2kV

Fall Time (Typ)

30 ns

Continuous Drain Current (ID)

87A

Threshold Voltage

2.3V

Gate to Source Voltage (Vgs)

25V

Reverse Voltage

the voltage drop across the diode if the voltage at the cathode is more positive than the voltage at the anode

1.2kV

Drain to Source Breakdown Voltage

1.2kV

Input Capacitance

The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

2.81nF

Max Junction Temperature (Tj)

150°C

FET Feature

Silicon Carbide (SiC)

Drain to Source Resistance

25mOhm

Rds On Max

34 mΩ

Height

17.5mm

REACH SVHC

Unknown

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

RoHS Compliant