C4D40120D

Cree/Wolfspeed C4D40120D

Part No:

C4D40120D

Manufacturer:

Cree/Wolfspeed

Datasheet:

-

Package:

TO-247-3

ROHS:

AINNX NO:

5826744-C4D40120D

Description:

DIODE ARRAY SCHOTTKY 1200V TO247

Products specifications
  • Factory Lead Time
    7 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Series
    Z-Rec®
  • Published
    2011
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    175°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    532W
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Common Cathode
  • Speed
    No Recovery Time > 500mA (Io)
  • Diode Type
    Silicon Carbide Schottky
  • Current - Reverse Leakage @ Vr
    200μA @ 1200V
  • Voltage - Forward (Vf) (Max) @ If
    1.8V @ 20A
  • Forward Current

    Current which flows upon application of forward voltage.

    54A
  • Max Reverse Leakage Current
    200μA
  • Operating Temperature - Junction
    -55°C~175°C
  • Max Surge Current

    Surge current is a peak non repetitive current. Maximum (peak or surge) forward current = IFSM or if(surge), the maximum peak amount of current the diode is able to conduct in forward bias mode.

    130A
  • Voltage - DC Reverse (Vr) (Max)
    1200V
  • Current - Average Rectified (Io)
    27A
  • Forward Voltage

    the amount of voltage needed to get current to flow across a diode.

    1.8V
  • Max Reverse Voltage (DC)
    1.2kV
  • Average Rectified Current

    Mainly used to characterize alternating voltage and current. It can be computed by averaging the absolute value of a waveform over one full period of the waveform.

    27A
  • Reverse Recovery Time
    0 s
  • Peak Reverse Current

    The maximum voltage that a diode can withstand in the reverse direction without breaking down or avalanching.If this voltage is exceeded the diode may be destroyed. Diodes must have a peak inverse voltage rating that is higher than the maximum voltage that will be applied to them in a given application.

    200μA
  • Max Repetitive Reverse Voltage (Vrrm)
    1.2kV
  • Peak Non-Repetitive Surge Current
    130A
  • Diode Configuration
    1 Pair Common Cathode
  • Max Forward Surge Current (Ifsm)
    130A
  • REACH SVHC
    Unknown
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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