Cree E3M0075120K

Package / Case

TO-247-4

RoHS

Details

Mounting Styles

Through Hole

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

32 A

Rds On - Drain-Source Resistance

97.5 mOhms

Vgs - Gate-Source Voltage

- 8 V, + 19 V

Vgs th - Gate-Source Threshold Voltage

3.6 V

Qg - Gate Charge

55 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 175 C

Pd - Power Dissipation

145 W

Channel Mode

Enhancement

Qualification

AEC-Q101

Forward Transconductance - Min

11 S

Factory Pack QuantityFactory Pack Quantity

30

Typical Turn-Off Delay Time

29 ns

Typical Turn-On Delay Time

8 ns

Series

E-Series

Configuration

Single

Number of Channels

1 Channel

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

22 ns

Transistor Type

Automotive Power MOSFET