CMPA5259080S

Cree CMPA5259080S

Part No:

CMPA5259080S

Manufacturer:

Cree

Datasheet:

-

Package:

QFN-48

AINNX NO:

30855717-CMPA5259080S

Description:

RF JFET Transistors 80W, GaN MMIC Power Amplifier, 40V, 5.2-5.9GHz, QFN, 7x7mm

Products specifications
  • Package / Case
    QFN-48
  • Shipping Restrictions
    This product may require additional documentation to export from the United States.
  • RoHS
    Details
  • Transistor Polarity
    N-Channel
  • Vds - Drain-Source Breakdown Voltage
    100 V
  • Vgs - Gate-Source Breakdown Voltage
    - 10 V, 2 V
  • Id - Continuous Drain Current
    4.8 A
  • Maximum Drain Gate Voltage
    -
  • Minimum Operating Temperature
    -
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 225 C
  • Mounting Styles
    SMD/SMT
  • Moisture Sensitive
    Yes
  • Factory Pack QuantityFactory Pack Quantity
    50
  • Vgs th - Gate-Source Threshold Voltage
    - 3.1 V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    5 GHz to 5.9 GHz
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    112.9 W
  • Transistor Type
    HEMT
  • Gain
    21.4 dB
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